A fabrication guide for planar silicon quantum dot heterostructures

We describe important considerations to create top-down fabricated planar quantum dots in silicon, often not discussed in detail in literature. The subtle interplay between intrinsic material properties, interfaces and fabrication processes plays a crucial role in the formation of electrostatically defined quantum dots. Processes such as oxidation, physical vapor deposition and atomic-layer deposition must be tailored in order to prevent unwanted side effects such as defects, disorder and dewetting. In two directly related manuscripts written in parallel we use techniques described in this work to create depletion-mode quantum dots in intrinsic silicon, and low-disorder silicon quantum dots defined with palladium gates. While we discuss three different planar gate structures, the general principles also apply to 0D and 1D systems, such as self-assembled islands and nanowires.Comment: Accepted for publication in Nanotechnology. 31 pages, 12 figure

Effect of surface losses on soliton propagation in Josephson junctions

We have explored numerically the effects on soliton propagation of a third order damping term in the modified sine‐Gordon equation. In Josephson tunnel junctions such a term corresponds physically to quasiparticle losses within the metal electrodes of the junction. We find that this loss term plays the dominant role in determining the shape and stability of the soliton at high velocity

A room-temperature mid-infrared photodetector for on-chip molecular vibrational spectroscopy

Infrared (IR) photodetection is of major scientific and technical interest since virtually all molecules exhibit characteristic vibrational modes in the mid-infrared region of the spectrum, giving rise to molecular spectroscopy and chemical imaging in this wavelength range. High-resolution IR spectroscopies, such as Fourier Transform IR spectroscopy, typically require large, bulky optical measurement systems and expensive photodetector components. Here, we present a high-responsivity photodetector for the mid-IR spectral region which operates at room temperature. Fabricated from silicon and aluminum, the photodetection mechanism is based on free carrier absorption, giving rise to a photoresponse rivalling commercially available cooled IR photodetectors. We demonstrate that infrared spectra of molecules deposited on this detector can be obtained by a direct electrical read-out. This work could pave the way for simple, fully integrated chemical sensors and other applications, such as chemical imaging, which would benefit from the combination of mid-IR detection, room-temperature operation, and ultracompact portability.</jats:p